Progress in the Molecular Beam Epitaxy of HgCdTe on Large-Area Si and CdZnTe Substrates |
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Authors: | M Reddy J M Peterson S M Johnson T Vang J A Franklin E A Patten W A Radford J W Bangs D D Lofgreen |
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Affiliation: | (1) Raytheon Vision Systems, 75 Coromar Dr., B-2/8, Goleta, CA 93117, USA |
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Abstract: | This paper presents the progress in the molecular beam epitaxy (MBE) growth of HgCdTe on large-area Si and CdZnTe substrates
at Raytheon Vision Systems. We report a very high-quality HgCdTe growth, for the first time, on an 8 cm × 8 cm CdZnTe substrate.
This paper also describes the excellent HgCdTe growth repeatability on multiple 7 cm × 7 cm CdZnTe substrates. In order to
study the percentage wafer area yield and its consistency from run to run, small lots of dual-band long-wave infrared/long-wave
infrared triple-layer heterojunction (TLHJ) layers on 5 cm × 5 cm CdZnTe substrates and single-color double-layer heterojunction
(DLHJ) layers on 6-inch Si substrates were grown and tested for cutoff wavelength uniformity and micro- and macrovoid defect
density and uniformity. The results show that the entire lot of 12 DLHJ-HgCdTe layers on 6-inch Si wafers meet the testing
criterion of cutoff wavelength within the range 4.76 ± 0.1 μm at 130 K and micro- and macrovoid defect density of ≤50 cm−2 and 5 cm−2, respectively. Likewise, five out of six dual-band TLHJ-HgCdTe layers on 5 cm × 5 cm CdZnTe substrates meet the testing criterion
of cutoff wavelength within the range 6.3 ± 0.1 μm at 300 K and micro- and macrovoid defect density of ≤2000 cm−2 and 500 cm−2, respectively, on the entire wafer area. Overall we have found that scaling our HgCdTe MBE process to a 10-inch MBE system
has provided significant benefits in terms of both wafer uniformity and quality. |
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Keywords: | Molecular beam epitaxy (MBE) HgCdTe CdZnTe HgCdTe on Si cutoff wavelength HgCdTe void defects HgCdTe on large-area substrates |
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