| 用减压化学气相沉积技术制备应变硅材料 |
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| 引用本文： | 王敬,梁仁荣,徐阳,刘志弘,许军,钱佩信.用减压化学气相沉积技术制备应变硅材料[J].半导体学报,2006,27(13):179-182. |
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| 作者姓名： | 王敬 梁仁荣 徐阳 刘志弘 许军 钱佩信 |
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| 作者单位： | 清华大学微电子学研究所，北京 100084;清华大学微电子学研究所，北京 100084;清华大学微电子学研究所，北京 100084;清华大学微电子学研究所，北京 100084;清华大学微电子学研究所，北京 100084;清华大学微电子学研究所，北京 100084 |
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| 摘 要： | 利用减压化学气相沉积技术，制备出应变Si/弛豫Si0.9Ge0.1/渐变组分弛豫SiGe/Si衬底. 通过控制组分渐变SiGe过渡层的组分梯度和适当优化弛豫SiGe层的外延生长工艺，有效地降低了表面粗糙度和位错密度.与Ge组分突变相比，采用线性渐变组分后，应变硅材料表面粗糙度从3.07nm减小到0.75nm，位错密度约为5E4cm-2，表面应变硅层应变度约为0.45%.
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| 关 键 词： | 应变硅 锗硅虚衬底 减压化学气相沉积 |
Fabrication of Strained Silicon Using Reduced Pressure Chemical Vapor Deposition Process |
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| Wang Jing,Liang Renrong,Xu Yang,Liu Zhihong,Xu Jun and Qian Peixin.Fabrication of Strained Silicon Using Reduced Pressure Chemical Vapor Deposition Process[J].Chinese Journal of Semiconductors,2006,27(13):179-182. |
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| Authors: | Wang Jing Liang Renrong Xu Yang Liu Zhihong Xu Jun and Qian Peixin |
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| Affiliation: | Institute of Microelectronics,Tsinghua University,Beijing 100084,China;Institute of Microelectronics,Tsinghua University,Beijing 100084,China;Institute of Microelectronics,Tsinghua University,Beijing 100084,China;Institute of Microelectronics,Tsinghua University,Beijing 100084,China;Institute of Microelectronics,Tsinghua University,Beijing 100084,China;Institute of Microelectronics,Tsinghua University,Beijing 100084,China |
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| Abstract: | Strained Si/uniform relaxed Si0.9Ge0.1/graded relaxed SiGe/Si substrate is fabricated using reduced pressure chemical vapor deposition process.The surface roughness and dislocation density are effectively decreased by optimizing the Ge grading rate in the graded SiGe buffer layer and the SiGe epitaxial process.Compared with samples without graded SiGe buffer,the surface roughness (root mean square) of strained Si with the graded SiGe buffer is improved form 3.07 to 0.75nm.The dislocation density is about 5E4cm-2,and the strain in the strained Si cap layer is about 0.45%. |
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| Keywords: | strained Si SiGe virtual substrate RPCVD |
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