Initial stages of growth of GaN over (0001) Al<sub>2</sub>O<sub>3</sub> substrate using MBE: a crystallographic analysis of the defects期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Initial stages of growth of GaN over (0001) Al₂O₃ substrate using MBE: a crystallographic analysis of the defects

Authors:	V Potin P Ruterana and G Nouet

Affiliation:	Laboratoire d'Etudes et de Recherche sur les Matériaux, UPRESA CNRS 6004, Institut des Sciences de la Matière et du Rayonnement, 6 Bd du Maréchal Juin, 14050 Caen Cedex, France

Abstract:	An AlN buffer layer grown on (0001) sapphire substrate by molecular beam epitaxy has been studied. It is found to be made of small grains having a common 0001] axis parallel to that of the substrate. Some grains are rotated around this axis and the angle rotation can reach 20° leading to a new epitaxial relationship (0001)_sap//(0001)_AlN and 11 Full-size image 0]_sap//21 Full-size image 0]_AlN. A model for the atomic structure of one of these grain boundaries is proposed using high resolution electron microscopy and extensive image simulation.

Keywords:	AlN Sapphire Grain boundary High resolution electron microscopy Molecular beam epitaxy
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