| ZnO掺杂对PNN-PZT陶瓷结构及压电性能的影响 |
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| 引用本文： | 张浩,郑德一,彭贵贵,胡顺敏,程程,张静.ZnO掺杂对PNN-PZT陶瓷结构及压电性能的影响[J].压电与声光,2016,38(6):923-925. |
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| 作者姓名： | 张浩 郑德一 彭贵贵 胡顺敏 程程 张静 |
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| 作者单位： | （中国电子科技集团公司第二十六研究所，重庆 400060） |
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| 基金项目： | 国家重大基础研究基金资助项目 |
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| 摘 要： | 通过传统的固相烧结法制备了Pb(Ni_(1/3)Nb_(2/3))_(0.5)(ZraTib)_(0.5)O_3+x%ZnO(PNN-PZT+x%ZnO,质量分数x=0.2,0.4,0.6,0.8)压电陶瓷,该文研究了不同ZnO含量对PNN-PZT压电陶瓷的微观形貌、相结构及压电性能的影响。通过X线(XRD)表明,过量的ZnO加入使压电陶瓷出现焦绿石相;通过扫描电镜(SEM)分析表明,当x>0.4时,ZnO的加入由于烧结温度的降低,晶界不明显。实验表明,烧结温度为1 190℃保温2h,ZnO的掺杂量x=0.4时,压电材料的综合性能最好:介电常数εr=5 596,介电损耗tanδ=2.12%,压电常数d33=534pC/N,机械耦合系数kp=0.53。
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| 关 键 词： | 固相烧结法 PNN-PZT 相结构 微观形貌 电学性能 |
Effect of ZnO Doping on Structure and Electrical Properties of PNN-PZT Ceramics |
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| ZHANG Hao
ZHENG Deyi
PENG Guigui
HU Shunmin
CHENG Cheng
ZHANG Jing.Effect of ZnO Doping on Structure and Electrical Properties of PNN-PZT Ceramics[J].Piezoelectrics & Acoustooptics,2016,38(6):923-925. |
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| Authors: | ZHANG Hao
ZHENG Deyi
PENG Guigui
HU Shunmin
CHENG Cheng
ZHANG Jing |
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| Affiliation: | (26th Institute of China Electronic Technology Group Corporation,Chongqing 400060,China) |
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| Abstract: | A method of frequency synthesis has been present at the X Band with low phase noise based on a high overtone bulk acoustic resonator (HBAR). According to the working principle of HBAR, using a HBAR and sound table filters consist of oscillating loop with low phase noise, which can directly generate S band signal. X-band signal can be obtained by quadruplicated frequency module. This method serried with SAW filter has raised out of band noise suppression. The phase noise at the frequency of 2.2 GHz reaches -118.9 dBc/Hz@1 kHz, and the phase noise of 8.8 GHz at X band is -107.4 dBc/Hz@1 kHz after quadruplicated frequency. |
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| Keywords: | solid-state reaction method PNN-PZT structure phase microstructure dielectric properties |
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