C3N—A 2D Crystalline,Hole‐Free,Tunable‐Narrow‐Bandgap Semiconductor with Ferromagnetic Properties |
| |
| Authors: | Siwei Yang Wei Li Caichao Ye Gang Wang He Tian Chong Zhu Peng He Guqiao Ding Xiaoming Xie Yang Liu Yeshayahu Lifshitz Shuit‐Tong Lee Zhenhui Kang Mianheng Jiang |
| |
| Affiliation: | 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, P. R. China;2. Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai, China;3. Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, P. R. China;4. School of Physical Science and Technology, Shanghai Tech University, Shanghai, P. R. China;5. Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, P. R. China;6. Department of Materials Science and Engineering, Technion, Israel Institute of Technology, Haifa, Israel |
| |
| Abstract: | Graphene has initiated intensive research efforts on 2D crystalline materials due to its extraordinary set of properties and the resulting host of possible applications. Here the authors report on the controllable large‐scale synthesis of C3N, a 2D crystalline, hole‐free extension of graphene, its structural characterization, and some of its unique properties. C3N is fabricated by polymerization of 2,3‐diaminophenazine. It consists of a 2D honeycomb lattice with a homogeneous distribution of nitrogen atoms, where both N and C atoms show a D6h‐symmetry. C3N is a semiconductor with an indirect bandgap of 0.39 eV that can be tuned to cover the entire visible range by fabrication of quantum dots with different diameters. Back‐gated field‐effect transistors made of single‐layer C3N display an on–off current ratio reaching 5.5 × 1010. Surprisingly, C3N exhibits a ferromagnetic order at low temperatures (<96 K) when doped with hydrogen. This new member of the graphene family opens the door for both fundamental basic research and possible future applications. |
| |
| Keywords: | 2D materials carbon ferromagnetic properties semiconductors |
|
|
