Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field‐Effect Transistors |
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| Authors: | Hu Chen Michael Hurhangee Mark Nikolka Weimin Zhang Mindaugas Kirkus Marios Neophytou Samuel J. Cryer David Harkin Pascal Hayoz Mojtaba Abdi‐Jalebi Christopher R. McNeill Henning Sirringhaus Iain McCulloch |
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| Affiliation: | 1. King Abdullah University of Science and Technology (KAUST), Kaust Solar Center (KSC), Thuwal, Saudi Arabia;2. Department of Chemistry and Centre for Plastic Electronics, Imperial College London, London, UK;3. Optoelectronics Group, Cavendish Laboratory, University of Cambridge, Cambridge, UK;4. BASF Schweiz AG, RAV/BE, Basel, Switzerland;5. Department of Materials Science and Engineering, Monash University, Victoria, Australia |
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| Abstract: | The charge‐carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene ( IDT ) repeat unit, which have both a low Urbach energy and a high mobility in thin‐film‐transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin‐film morphology evaluated, with the co ‐benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm2 V?1 s?1 in bottom‐gate top‐contact organic field‐effect transistors. |
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| Keywords: | C H cyclization high‐mobility IDT IDTT organic field‐effect transistors (OFETs) TIF |
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