A Solution‐Processed High‐Performance Phototransistor based on a Perovskite Composite with Chemically Modified Graphenes |
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| Authors: | Liu Qian Yilin Sun Mingmao Wu Dan Xie Liming Ding Gaoquan Shi |
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| Affiliation: | 1. Department of Chemistry, Tsinghua University, Beijing, China;2. CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, China;3. University of Chinese Academy of Sciences, Beijing, China;4. Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing, China |
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| Abstract: | Phototransistors with a structure of a nitrogen‐doped graphene quantum dots (NGQDs)–perovskite composite layer and a mildly reduced graphene oxide (mrGO) layer are fabricated through a solution‐processing method. This hybrid phototransistor exhibits broad detection range (from 365 to 940 nm), high photoresponsivity (1.92 × 104 A W?1), and rapid response to light on–off (≈10 ms). NGQDs offer an effective and fast path for electron transfer from the perovskite to the mrGO, resulting in the improvement of photocurrent and photoswitching characteristics. The high photoresponsivity can also be ascribed to a photogating effect in the device. In addition, the phototransistor shows good stability with poly(methyl methacrylate) encapsulation, and can maintain 85% of its initial performance for 20 d in ambient air. |
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| Keywords: | graphene oxide perovskites phototransistors quantum dots |
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