3D Atomic‐Scale Insights into Anisotropic Core–Shell‐Structured InGaAs Nanowires Grown by Metal–Organic Chemical Vapor Deposition |
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| Authors: | Jiangtao Qu Sichao Du Tim Burgess Changhong Wang Xiangyuan Cui Qiang Gao Weichao Wang Hark Hoe Tan Hui Liu Chennupati Jagadish Yingjie Zhang Hansheng Chen Mansoor Khan Simon Ringer Rongkun Zheng |
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| Affiliation: | 1. School of Physics and the Australian Institute for Nanoscale Science and Technology, The University of Sydney, Sydney, Australia;2. Department of Electronic Materials Engineering, The Australian National University, Canberra, Australia;3. Department of Electronic Science and Engineering, Nankai University, Tianjing, China;4. Australian Centre for Microscopy & Microanalysis and Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, Australia;5. Australian Nuclear Science and Technology Organisation, Sydney, Australia |
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| Abstract: | III–V ternary InGaAs nanowires have great potential for electronic and optoelectronic device applications; however, the 3D structure and chemistry at the atomic‐scale inside the nanowires remain unclear, which hinders tailoring the nanowires for specific applications. Here, atom probe tomography is used in conjunction with a first‐principles simulation to investigate the 3D structure and chemistry of InGaAs nanowires, and reveals i) the nanowires form a spontaneous core–shell structure with a Ga‐enriched core and an In‐enriched shell, due to different growth mechanisms in the axial and lateral directions; ii) the shape of the core evolves from hexagon into Reuleaux triangle and grows larger, which results from In outward and Ga inward interdiffusion occurring at the core–shell interface; and iii) the irregular hexagonal shell manifests an anisotropic growth rate on {112}A and {112}B facets. Accordingly, a model in terms of the core–shell shape and chemistry evolution is proposed, which provides fresh insights into the growth of these nanowires. |
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| Keywords: | atom probe tomography core– shell structures epitaxy growth gold catalysts InGaAs nanowires |
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