Flexible Gallium Nitride for High‐Performance,Strainable Radio‐Frequency Devices |
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Authors: | Nicholas R Glavin Kelson D Chabak Eric R Heller Elizabeth A Moore Timothy A Prusnick Benji Maruyama Dennis E Walker Jr Donald L Dorsey Qing Paduano Michael Snure |
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Affiliation: | 1. Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright‐Patterson AFB, OH, USA;2. Air Force Research Laboratory, Sensors Directorate, Wright‐Patterson AFB, OH, USA;3. KBRwyle, Dayton, OH, USA |
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Abstract: | Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices for transmission of radio‐frequency (RF) signals over large distances for more efficient wireless communication. For the first time, strainable high‐frequency RF GaN devices are demonstrated, whose exceptional performance is enabled by epitaxial growth on 2D boron nitride for chemical‐free transfer to a soft, flexible substrate. The AlGaN/GaN heterostructures transferred to flexible substrates are uniaxially strained up to 0.85% and reveal near state‐of‐the‐art values for electrical performance, with electron mobility exceeding 2000 cm2 V?1 s?1 and sheet carrier density above 1.07 × 1013 cm?2. The influence of strain on the RF performance of flexible GaN high‐electron‐mobility transistor (HEMT) devices is evaluated, demonstrating cutoff frequencies and maximum oscillation frequencies greater than 42 and 74 GHz, respectively, at up to 0.43% strain, representing a significant advancement toward conformal, highly integrated electronic materials for RF applications. |
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Keywords: | flexible GaN flexible RF electronics gallium nitride |
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