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Giant Polarization Sustainability in Ultrathin Ferroelectric Films Stabilized by Charge Transfer
Authors:Sirui Zhang  Yinlian Zhu  Yunlong Tang  Ying Liu  Shuang Li  Mengjiao Han  Jinyuan Ma  Bo Wu  Zuhuang Chen  Sahar Saremi  Xiuliang Ma
Affiliation:1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China;2. University of Chinese Academy of Sciences, Beijing, China;3. School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou, China;4. Department of Materials Science and Engineering, University of California, Berkeley, CA, USA;5. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
Abstract:Ferroelectricity is generally deteriorated or even vanishes when the ferroelectric films are downsized to unit cell scale. To maintain and enhance the polarization in nanoscale ferroelectrics are of scientific and technological importance. Here, giant polarization sustainability is reported in a series of ultrathin PbTiO3 films scaled down to three unit cells grown on NdGaO3(110) substrates with La0.7Sr0.3MnO3 as bottom electrodes. Atomic mappings via aberration‐corrected scanning transmission electron microscopy demonstrate the robust ferroelectricity for the sub‐10 nm thick film. For the 1.2 nm thick film, the polarization reaches ≈50 µC cm?2. The 2 nm thick film possesses a polarization as high as the bulk value. The films ranging from 10 to 35 nm display a giant elongation of out‐of‐plane lattice parameter, which corresponds to a polarization of 100 µC cm?2, 20% larger than that of the bulk PbTiO3. The giant enhancement of polarization in the present films is proposed to result from the charge transfer at the La0.7Sr0.3MnO3/PbTiO3 interface, as supported by the anomalous decrease of Mn valence measured from X‐ray photoelectron spectroscopy. These results reveal the significant role of charge transfer at interfaces in improving large polarizations in ultrathin ferroelectrics and are meaningful for the development of future electronic devices.
Keywords:ferroelectric films  interface  PbTiO3  polarization enhancement  scanning transmission electron microscopy (STEM)
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