A 1D Vanadium Dioxide Nanochannel Constructed via Electric‐Field‐Induced Ion Transport and its Superior Metal–Insulator Transition |
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| Authors: | Wuhong Xue Gang Liu Zhicheng Zhong Yuehua Dai Jie Shang Yiwei Liu Huali Yang Xiaohui Yi Hongwei Tan Liang Pan Shuang Gao Jun Ding Xiao‐Hong Xu Run‐Wei Li |
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| Affiliation: | 1. Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, China;2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, China;3. Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, Shanxi, China;4. Institute of Electronic and Information Project, Anhui University, Hefei, Anhui, China;5. Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore |
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| Abstract: | Nanoscale manipulation of materials' physicochemical properties offers distinguished possibility to the development of novel electronic devices with ultrasmall dimension, fast operation speed, and low energy consumption characteristics. This is especially important as the present semiconductor manufacturing technique is approaching the end of miniaturization campaign in the near future. Here, a superior metal–insulator transition (MIT) of a 1D VO2 nanochannel constructed through an electric‐field‐induced oxygen ion migration process in V2O5 thin film is reported for the first time. A sharp and reliable MIT transition with a steep turn‐on voltage slope of <0.5 mV dec?1, fast switching speed of 17 ns, low energy consumption of 8 pJ, and low variability of <4.3% is demonstrated in the VO2 nanochannel device. High‐resolution transmission electron microscopy observation and theoretical computation verify that the superior electrical properties of the present device can be ascribed to the electroformation of nanoscale VO2 nanochannel in V2O5 thin films. More importantly, the incorporation of the present device into a Pt/HfO2/Pt/VO2/Pt 1S1R unit can ensure the correct reading of the HfO2 memory continuously for 107 cycles, therefore demonstrating its great possibility as a reliable selector in high‐density crossbar memory arrays. |
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| Keywords: | metal– insulator transitions nanoconfinement oxygen ion migration resistive switching nanochannels |
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