Flexible,Semitransparent, and Inorganic Resistive Memory based on BaTi0.95Co0.05O3 Film |
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| Authors: | Yuxi Yang Guoliang Yuan Zhibo Yan Yaojin Wang Xubing Lu Jun‐Ming Liu |
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| Affiliation: | 1. School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, P. R. China;2. National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, P. R. China;3. Institute for Advanced Materials and Guangdong Provincial Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou, China |
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| Abstract: | Perovskite ceramics and single crystals are commonly hard and brittle due to their small maximum elastic strain. Here, large‐scale BaTi0.95Co0.05O3 (BTCO) film with a SrRuO3 (SRO) buffered layer on a 10 µm thick mica substrate is flexible with a small bending radius of 1.4 mm and semitransparent for visible light at wavelengths of 500–800 nm. Mica/SRO/BTCO/Au cells show bipolar resistive switching and the high/low resistance ratio is up to 50. The resistive‐switching properties show no obvious changes after the 2.2 mm radius memory being written/erased for 360 000 cycles nor after the memory being bent to 3 mm radius for 10 000 times. Most importantly, the memory works properly at 25–180 °C or after being annealed at 500 °C. The flexible and transparent oxide resistive memory has good prospects for application in smart wearable devices and flexible display screens. |
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| Keywords: | flexible inorganic resistive random access memory semitransparent |
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