A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers |
| |
| Authors: | Jiang Pu Taiyo Fujimoto Yuki Ohasi Shota Kimura Chang‐Hsiao Chen Lain‐Jong Li Tomo Sakanoue Taishi Takenobu |
| |
| Affiliation: | 1. Department of Advanced Science and Engineering, Waseda University, Tokyo, Japan;2. Department of Applied Physics, Nagoya University, Nagoya, Japan;3. Department of Applied Physics, Waseda University, Tokyo, Japan;4. Department of Automatic Control Engineering, Feng Chia University, Taichung, Taiwan;5. Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia |
| |
| Abstract: | The light‐emitting device is the primary device for current light sources. In principle, conventional light‐emitting devices need heterostructures and/or intentional carrier doping to form a p–n junction. This junction formation is, however, very difficult to achieve for most emerging semiconductors, and the fabrication of light‐emitting devices is invariably a significant challenge. This study proposes a versatile and simple approach to realize light‐emitting devices. This proposed device requires only a semiconducting film with two electrodes that are covered with an electrolyte. This unique structure achieves light emission at a voltage slightly larger than the bandgap energy of materials. This study applies this concept to emerging direct bandgap semiconductors, such as transition metal dichalcogenide monolayers and zinc oxide single crystals. These devices generate obvious light emission and provide sufficient evidence of the formation of a dynamic p–i–n junction or tunneling junction, presenting a versatile technique to develop optoelectronic devices. |
| |
| Keywords: | electric double layers light‐emitting devices p– i– n junction transition metal dichalcogenides zinc oxide |
|
|
