Polytype Stability and Microstructural Characterization of Silicon Carbide Epitaxial Films Grown on [ {\hbox{11}}\overline{{\hbox{2}}} {\hbox{0}} ]- and [0001]-Oriented Silicon Carbide Substrates期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Polytype Stability and Microstructural Characterization of Silicon Carbide Epitaxial Films Grown on [ {\hbox{11}}\overline{{\hbox{2}}} {\hbox{0}} ]- and [0001]-Oriented Silicon Carbide Substrates

Authors:	SM Bishop CL Reynolds Jr Z Liliental-Weber Y Uprety J Zhu D Wang M Park JC Molstad DE Barnhardt A Shrivastava TS Sudarshan RF Davis

Affiliation:	1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA 2. Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA 3. Laboratory for Nanophotonics, Department of Physics, Auburn University, Auburn, AL, 36849, USA 4. Maxion Technologies, Hyattsville, MD, 20782, USA 5. Work performed at Army Research Laboratory, Adelphi, MD, 20783, USA 6. Global Technologies, Inc., 2265 E 25th St., Idaho Falls, ID, 83404, USA 7. Department of Electrical Engineering, University of South Carolina, Columbia, SC, 29208, USA 8. Department of Material Science and Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213-3890, USA

Abstract:	The polytype and surface and defect microstructure of epitaxial layers grown on 4H( ${\hbox{11}}\overline{{\hbox{2}}} {\hbox{0}}$ ), 4H(0001) on-axis, 4H(0001) 8° off-axis, and 6H(0001) on-axis substrates have been investigated. High-resolution x-ray diffraction (XRD) revealed the epitaxial layers on 4H( ${\hbox{11}}\overline{{\hbox{2}}} {\hbox{0}}$ ) and 4H(0001) 8° off-axis to have the 4H-SiC (silicon carbide) polytype, while the 3C-SiC polytype was identified for epitaxial layers on 4H(0001) and 6H(0001) on-axis substrates. Cathodoluminescence (CL), Raman spectroscopy, and transmission electron microscopy (TEM) confirmed these results. The epitaxial surface of 4H( ${\hbox{11}}\overline{{\hbox{2}}} {\hbox{0}}$ ) films was specular with a roughness of 0.16-nm root-mean-square (RMS), in contrast to the surfaces of the other epitaxial layer-substrate orientations, which contained curvilinear boundaries, growth pits (∼3 × 10⁴ cm⁻²), triangular defects >100 μm, and significant step bunching. Molten KOH etching revealed large defect densities within 4H( ${\hbox{11}}\overline{{\hbox{2}}} {\hbox{0}}$ ) films that decreased with film thickness to ∼10⁶ cm⁻² at 2.5 μm, while cross-sectional TEM studies showed areas free of defects and an indistinguishable film-substrate interface for 4H( ${\hbox{11}}\overline{{\hbox{2}}} {\hbox{0}}$ ) epitaxial layers.

Keywords:	Silicon carbide (SiC) chemical vapor deposition (CVD) polytype replication x-ray diffraction (XRD) cathodoluminescence (CL) Raman spectroscopy transmission electron microscopy (TEM) atomic force microscopy (AFM)
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