Defects in carbon and oxygen implanted p-type silicon |
| |
| Affiliation: | 1. Ruđer Bošković Institute, P.O. Box 180, HR-10000 Zagreb, Croatia;2. Faculty of Electrical Engineering and Computing, Unska 3, HR-10000 Zagreb, Croatia;1. HCTLab, Departamento de Tecnología Electrónica y de las Comunicaciones, EPS, Universidad Autónoma de Madrid, E-28049, C/Francisco Tomás y Valiente, 11, Madrid, Spain;2. Servicio de Radiofísica, Hospital Universitario ‘San Cecilio’, Avda Dr Olóriz, 16, E-18012 Granada, Spain;3. Tyndal National Insitute, Lee Maltings, Duke Parade, Cork, Ireland;4. ECsens, Departamento de Electrónica y Tecnología de Computadores, ETSIIT, Universidad de Granada, c/P, Daniel Saucedo Aranda s/n, E-18071 Granada, Spain;1. College of Sciences, Northeastern University, Shenyang 110819, China;2. Key Laboratory for Anisotropy and Texture (MoE), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China;1. Department of Physics, Federal University of Agriculture, PMB 2240 Abeokuta, Nigeria;2. Physics with Electronics Unit, Moshood Abiola Polytechnic, PMB 2210 Abeokuta, Nigeria;3. National Institute for Theoretical Physics, Mandelstam Institute for Theoretical Physics, School of Physics, University of Witwatersrand, Johannesburg, Wits, 2050, South Africa;1. Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, China;2. Concord University College, Fujian Normal University, Fuzhou 350117, China;3. Fujian Provincial Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen 361005, China |
| |
| Abstract: | Both oxygen and carbon ion implantation are frequently used to form either insulating buried SiO2 or SiC layer for various purposes. This creates a renewal of the interest in defects produced during such implantation processes. In the present paper we report on deep level transient spectroscopy studies of defect states occurring in boron-doped p-type silicon after high dose C+ and CO+ ion implantation and subsequent thermal annealing. It is shown that the predominant defect created during the implantation is in both cases related to silicon selfinterstitial clusters, which upon annealing at higher temperatures evolve to extended structural defects. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
