Built-in electric fields in InAs quantum dots grown on (N11) GaAs substrates |
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| Affiliation: | 1. Dipartimento di Scienza dei Materiali, Istituto Nazionale per la Fisica della Materia, Universitá di Milano Bicocca, Via Cozzi 53, I-20125 Milan, Italy;2. European Laboratory for Non-linear Spectroscopy, Universitá di Firenze, Largo E. Fermi 2, 50125 Florence, Italy;3. School of Physics and Astronomy, University of Nottingham, University Park, Nottingham NG7 2RD, UK;1. Department of Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden;2. Materials Department, University of California, Santa Barbara, CA 93106, USA;1. RIKEN (The Institute of Physical and Chemical Research), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan;2. Saitama University, 255 Shimo-ookubo, Sakuraku, Saitama 338-8570, Japan;1. IMM-CNR, Istituto per la Microelettronica e Microsistemi, Via per Monteroni, I-73100 Lecce, Italy;2. Dipartimento di Ingegneria dell’Innovazione, Università del Salento, Via per Monteroni, I-73100 Lecce, Italy;3. Naval Research Laboratory, 4555 Overlook Ave. S. W., Washington, DC 20375, USA;4. ISMN-CNR, Istituto per lo Studio dei Materiali Nanostrutturati, Via Salaria Km 29,300, I-00016 Monterotondo St. (Roma), Italy;5. Electrical and Computer Engineering Department, Drexel University, Philadelphia, PA 19104, USA;1. Department of Physics, Trakya University, Edirne 22030, Turkey;2. Department of Mathematics, Trakya University, Edirne 22030, Turkey;3. International Centre for Physics and Applied Mathematics, Trakya University, 22030 Edirne, Turkey;1. Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan;2. Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan |
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| Abstract: | We report on the optical properties and carrier kinetics of a set of InAs self-assembled quantum dots on (N11)A/B GaAs substrates by means of cw and time-resolved PL. The cw-PL spectra show a blue shift of the PL band on different (N11) QD structures when increasing the carrier photoinjection. This is attributed to a photoinduced screening of the quantum confined Stark shift of the QD optical transition due to a large built-in electric field. The presence of an internal electric field also induces intrinsic optical non-linearity in time-resolved measurements. The analysis of the recombination kinetics shows that the carrier screening occurs inside the QDs, thus demonstrating the intrinsic nature of the built-in field. The dependence of the internal field on the substrate orientation and termination agrees with the presence of piezoelectric field and permanent dipole moment inside the QDs. |
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