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Growth and hydrogenation of epitaxial yttrium switchable mirrors on CaF2
Affiliation:1. CNRS, Univ. Grenoble Alpes, Institut Néel, F-38042 Grenoble, France;2. Observatoire des Sciences de l''Univers de Grenoble, Grenoble, France;3. GéoRessources, Université de Lorraine, BP 70239, 54506 Vandoeuvre-les-Nancy Cedex, France;1. Electrochemical Energy Materials Laboratory, Department of Physics, Rajaram College, Kolhapur, 416 004, India;2. School of Nanoscience and Technology, Shivaji University, Kolhapur 416004, India;3. Department of Physics, Tuljaram Chaturchand College, Baramati 413 102, India;4. Centre for Materials for Electronics Technology, Thrissur, 680581, India;5. Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, South Korea
Abstract:Rutherford backscattering (RBS) ion channeling measurements and X-ray diffraction experiments are performed to study the epitaxial nature of as-deposited yttrium on CaF2〈111〉 substrates and the effect of hydrogenation on the crystalline quality. The RBS and X-ray results clearly demonstrate the unique epitaxial relation between as-deposited films and the substrate, which is preserved upon loading with hydrogen. X-Ray diffraction reveals: (i) a remarkably large lattice expansion in the direction normal to the substrate, which decreases with increasing film thickness; and (ii) an in-plane compression of the lattice. This peculiar result is related to the difference in thermal expansion coefficients of film and substrate. RBS ion channeling measurements reveal a thickness dependence of the mismatch-induced stresses. As expected, the stresses relax with increasing distance from the film/substrate interface, but surprisingly, even with films as thick as 400 nm considerable dechanneling is still observed at the film surface. Film quality, i.e. the film/substrate mismatch as well as the induced stresses and their relaxation, are discussed in relation to atomic force microscopy (AFM) results on these epitaxial films.
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