Thin film atomic layer deposition equipment for semiconductor processing |
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| Affiliation: | 1. Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Apdo. Postal 14, C.P. 22800 Ensenada, BC., México;2. CONACyT, Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Apdo. Postal 14, C.P. 22800, Ensenada, B.C., México;3. Universidad Autónoma de Baja California, Km. 103 Carretera Tijuana-Ensenada, Ensenada, Baja California C.P. 22860, México;4. Universidad Autónoma de Baja California, Instituto de Ingeniería, Blvd. Benito Juárez s/n, C.P. 21280 Mexicali, B.C., México;1. Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083, China;2. Tianjin International Joint Research Centre of Surface Technology for Energy Storage Materials, College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, China;3. Center for Advanced Energy Materials and Devices, Xi′an University of Technology, Xi′an 710048, China;4. R&D Center for Vehicle Battery and Energy Storage, General Research Institute for Nonferrous Metals, Beijing 100088, China;1. Institut Européen des Membranes IEM, UMR-5635, Université de Montpellier, ENSCM, CNRS, Place Eugène Bataillon, F-34095 Montpellier Cedex 5, France;2. Institut Universitaire de France (IUF), MESRI, 1 rue Descartes, 75231 Paris cedex 05, France;1. State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei, PR China;2. State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei, PR China;3. State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, PR China |
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| Abstract: | Atomic layer deposition (ALD) of ultrathin high-K dielectric films has recently penetrated research and development lines of several major memory and logic manufacturers due to the promise of unprecedented control of thickness, uniformity, quality and material properties. LYNX-ALD technology from Genus, currently at beta phase, was designed around the anticipation that future ultrathin materials are likely to be binary, ternary or quaternary alloys or nanolaminate composites. A unique chemical delivery system enables synergy between traditional, production-proven low pressure chemical vapor deposition (LPCVD) technology and atomic layer deposition (ALD) controlled by sequential surface reactions. Source chemicals from gas, liquid or solid precursors are delivered to impinge on reactive surfaces where self-limiting surface reactions yield film growth with layer-by-layer control. Surfaces are made reactive by the self-limiting reactions, by surface species manipulation, or both. The substrate is exposed to one reactant at a time to suppress possible chemical vapor deposition (CVD) contribution to the film. Precisely controlled composite materials with multiple-component dielectric and metal–nitride films can be deposited by ALD techniques. The research community has demonstrated these capabilities during the past decade. Accordingly, ALD equipment for semiconductor processing is unanimously in high demand. However, mainstream device manufacturers still criticize ALD to be non-viable for Semiconductor device processing. This article presents a broad set of data proving feasibility of ALD technology for semiconductor device processing. |
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