Characterization and modeling of avalanche multiplication in HBTs |
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| Affiliation: | 1. Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan;2. Department of Physics, National Changhua University of Education, Changhua 500, Taiwan |
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| Abstract: | The accurate modeling of weak avalanche breakdown of HBTs in compact bipolar transistor models for circuit simulation is presented. Based on various device electrical characteristics that are grouped into three classes, a modified VBIC avalanche multiplication model is proposed. By simply replacing one constant avalanche model parameter with current linear dependence, the new model predicts well broad behaviors of breakdown from weak avalanche up into high level injections. |
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