Atomic layer deposition of BN thin films |
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| Affiliation: | 1. Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090, Russia;2. Laboratory of Physical Principles for Integrated Microelectronics, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090, Russia;3. Laboratory of Nonequilibrium Semiconductors Systems, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090, Russia |
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| Abstract: | Boron nitride has for the first time been deposited from gaseous BBr3 and NH3 by means of atomic layer deposition. The deposition temperatures were 400 and 750 °C, and the total pressure was 10 torr. The BN films, deposited on silica substrates, showed a turbostratic structure with a c-axis of 0.70 nm at a deposition temperature of 750 °C as determined by X-ray diffraction. The films deposited at 400 °C were significantly less ordered. The film density was obtained by means of X-ray reflectivity, and it was found to be 1.65–1.70 and 1.90–1.95 g cm−3 for the films deposited at 400 and 750 °C, respectively. Furthermore, the films were, regardless of deposition temperature, fully transparent and very smooth. The surface roughness was 0.3–0.5 nm as measured by optical interferometry. |
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