Synthesis of amorphous silicon carbonitride films by pulsed laser deposition |
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| Affiliation: | 1. Integrated Manufacturing Technologies Institute, 800 Collip Circle, London, ON, N6G 4X8, Canada;2. Institute for Microstructural Sciences, 1500 Montreal Road, Ottawa, ON, K1A 0R6, Canada;1. Laboratory of Infrared Material and Devices, The Advanced Technology Research Institute, Ningbo University, Ningbo 315211, China;2. Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo 315211, China;1. LPCMME, Département de Physique, Université d’Oran 1, Algeria;2. Laboratoire de Chimie Physique des Macromolécules et Interfaces Biologiques, Université de Mascara, Algeria;3. LPMC, UFR des Sciences, Université de Picardie Jules Verne, 33 rue Saint-Leu, 80039, Amiens, France;1. Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China;2. School of Science, Xi’an Polytechnic University, Xi’an 710048, China;3. Colloge of stomatology, Xi’an Jiaotong University, Xi’an 710004, China;1. Horia Hulubei National Institute for Physics and Nuclear Engineering (IFIN-HH), P.O.B. MG-6, RO-077125, 30 Reactorului St., Magurele, Romania;2. National Institute of Materials Physics, RO-077125, 105 bis Atomistilor Str., Magurele-Bucharest, Romania;3. National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., RO-077125 Magurele-Bucharest, Romania;4. Faculty of Physics, University of Bucharest, 405 Atomistilor Str., RO-077125, P.O.B. MG-11, Magurele-Bucharest, Romania;1. School of Physics, Huazhong University of Science and Technology, Wuhan 430074, PR China;2. State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430070, PR China;1. King Abdullah Institute for Nanotechnology, King Saud University, Riyadh 11451, Saudi Arabia;2. Department of Physics, Chaudhary Devi Lal University, Sirsa 125055, India |
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| Abstract: | Silicon carbonitride (SiCxNy) films were grown on silicon substrates using the pulsed laser deposition (PLD) technique. A silicon carbide (SiC) target was ablated by the beam of a KrF excimer laser in a nitrogen (N2) background gas. The morphology, structure, composition, as well as the optical and mechanical properties of the coatings were investigated as functions of the N2 pressure (1–30 mtorr) and substrate temperature (250–650 °C). Smooth, amorphous films were obtained for all the processing parameters. The concentration of nitrogen in the deposits was found to increase when increasing the N2 pressure, while the silicon and carbon concentrations decreased concurrently. At a N2 gas pressure of 30 mtorr, a nitrogen content in the range of 28–34 at.% was obtained. Two growth regimes were identified as a function of the N2 pressure. For a pressure up to 10 mtorr, highly dense and homogeneous films were observed, while textured deposits were obtained at higher pressures. The latter regime was characterized by an oxygen contamination of the coatings, whose severity increased when increasing the N2 pressure or when reducing the deposition temperature. The hardness of the films was found to be a function of the growth regime; the highest values of the hardness were obtained in the low-pressure regime, in the range of 27–42 GPa. |
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