Cubic BN formation by ion implantation |
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Affiliation: | 1. Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 53 Prague 6, Czech Republic;2. University of Chemistry and Technology, Technicka 5, 166 28 Prague, Czech Republic |
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Abstract: | Boron nitride was synthesized by nitrogen ion implantation. Boron films were prepared as implantation targets on single-crystal Si(100) substrates by 13.56-MHz radio frequency sputtering. The diatomic single 30-keV nitrogen ions were chosen for implantation. The implantation dose ranged from 1×1017 ions/cm2 to 2×1018 ions/cm2. The films were characterized using a transmission electron microscope. Several phases of boron nitride were found at the medium implantation dose. At the high dose of 2×1018 ions/cm2, the pure c-BN phase was observed. It is believed that the transition from the low ordered phases to c-BN phase occurred during implantation. The films showed good adhesion to the Si substrate. |
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