Suppression of Cu agglomeration in the Cu/Ta/Si structure by capping layer |
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| Affiliation: | 1. Green Strategic Energy Research Institute, Department of Electronics Engineering, Sejong University, Gwangjin-gu, Seoul 05006, Republic of Korea;2. Jusung Engineering, Gwangju-si, Gyeongggi-do 12773, Republic of Korea;1. Advanced Functional Technology R&D Department, Korea Institute of Industrial Technology (KITECH), Incheon, 21999, Republic of Korea;2. Department of Materials Engineering, Korea Aerospace University, Gyeonggi-do, 412-791, Republic of Korea;3. School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea;4. Corning Technology Center Korea, Corning Precision Materials Co. Ltd., Asan-si, Chungcheongnam-do, 31454, Republic of Korea;5. Department of Applied Chemistry, Kyung Hee University, Yongin 17104, Republic of Korea;1. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Dingxi 1295, Changning, Shanghai, 200050, China;2. University of Chinese Academy of Sciences, Beijing, 100049, China;3. Center of Innovation and Development in Construction, Tongji University, Siping 1239, Yangpu, Shanghai, China;4. Materials Research Institute for Sustainable Development, National Institute of Advanced Industrial Science and Technology, Nagoya 463-8560, Japan;1. School of Photovoltaic and Renewable Energy Engineering, UNSW Australia, Sydney, NSW, 2052, Australia;2. Meyer Burger AG, Schorenstrasse 39, CH-3645, GWatt, Switzerland;3. Roth & Rau Research AG, Innoparc, Rouges-Terres 61, CH-2068, Hauterive, Switzerland |
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| Abstract: | Cu/Ta/Si (100) structures deposited by the non-mass separated ion beam deposition system showed a slight resistivity increase at 650 °C due to a Cu agglomeration. To suppress the Cu agglomeration on the Ta layer, a capping layer was deposited on the Cu/Ta/Si structure using Ta or SiO2 as a suppressor. In the case of the Ta suppressor, the agglomeration of Cu was observed between two distorted Ta films due to the difference in thermal expansion between the Cu film and the Ta film at high temperature. On the other hand, the SiO2 layer was found to be suitable as a suppressor, and the Cu agglomeration did not occur even after annealing at 650 °C by the suppression of the Cu diffusion. |
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