Enhanced Thermoelectric Performance of <Emphasis Type="Italic">c</Emphasis>-Axis-Oriented Epitaxial Ba-Doped BiCuSeO Thin Films |
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| Authors: | Dachao Yuan Shuang Guo Shuaihang Hou Yuejin Ma Jianglong Wang Shufang Wang |
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| Affiliation: | 1.Hebei Key Lab of Optic-electronic Information and Materials, The College of Physics Science and Technology,Hebei University,Baoding,China;2.College of Mechanical and Electrical Engineering,Agricultural University of Hebei,Baoding,China |
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| Abstract: | We reported the epitaxial growth of c-axis-oriented Bi1?xBaxCuSeO (0?≤ x ≤?10%) thin films and investigated the effect of Ba doping on the structure, valence state of elements, and thermoelectric properties of the films. X-ray photoelectron spectroscopy analysis reveal that Bi3+ is partially reduced to the lower valence state after Ba doping, while Cu and Se ions still exist as +?1 and ??2 valence state, respectively. As the Ba doping content increases, both resistivity and Seebeck coefficient decrease because of the increased hole carrier concentration. A large power factor, as high as 1.24 mWm?1 K?2 at 673 K, has been achieved in the 7.5% Ba-doped BiCuSeO thin film, which is 1.5 times higher than those reported for the corresponding bulk samples. Considering that the nanoscale-thick Ba-doped films should have a very low thermal conductivity, high ZT can be expected in the films. |
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