Trapping states in thin film transistors measured by thermally stimulated currents |
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| Authors: | S.T. Kimmins J.C. Anderson |
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| Affiliation: | Materials Section, Department of Electrical Engineering, Imperial College of Science and Technology, London SW7 2BT Gt. Britain |
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| Abstract: | Thermally stimulated current measurements were made on MIM capacitors of sputtered SiO2 and on SiO2/CdSe thin film transistors. The peaks in the spectra were interpreted in terms of trapping states in the insulator and defect levels in the semiconductor. Fast interface and grain boundary states, if present, have densities below the detection level of 1019 m-3. |
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