Electrical transport properties of thallium-doped p-type PbTe films |
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| Authors: | A.L. Dawar O.P. Taneja S.K. Paradkar Partap Kumar P.C. Mathur |
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| Affiliation: | Defence Science Laboratory, Metcalfe House, Delhi 110054 India;Government College Gurgaon, Gurgaon 122000, Haryana India;Department of Physics and Astrophysics, University of Delhi, Delhi 110007 India |
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| Abstract: | Hall measurements were made in the temperature range 77–700 K on thallium- doped p-type epitaxial films of PbTe having free carrier concentrations in the range 5×1017?6×1019cm?3 at 300 K. The various band parameters, i.e. mobility, effective mass and population ratios for light and heavy holes, were estimated as functions of temperature and carrier concentration. These results were compared with reported data on bulk samples. |
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