| Pt电极的磁增强反应离子刻蚀的研究 |
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| 引用本文： | 吴小鹏,陈侃松,顾豪爽,胡宽,熊娟. Pt电极的磁增强反应离子刻蚀的研究[J]. 电子元件与材料, 2008, 27(4): 62-64 |
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| 作者姓名： | 吴小鹏 陈侃松 顾豪爽 胡宽 熊娟 |
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| 作者单位： | 湖北大学,物理学与电子技术学院,铁电压电材料与器件湖北省重点实验室,湖北,武汉,430062 |
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| 摘 要： | 以SF6/O2作为刻蚀气体,用磁增强反应离子刻蚀(MERIE)技术,对磁控溅射法制备的Pt电极进行了刻蚀。结果表明:Pt的刻蚀速率与刻蚀气体的混合比率以及刻蚀功率都有一定关系。在相同功率下,R[O2∶(SF6+O2)]=2/6,刻蚀速率达到极大值,功率为120W时,刻蚀速率极大值为12.4nm/min。AFM分析表明,薄膜表面的粗糙度随刻蚀功率增加而变大,均方根粗糙度从120W时的0.164nm增加到160W时的0.285nm。经优化工艺参数刻蚀后的Pt电极图形结构平整,边缘整齐。
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| 关 键 词： | 电子技术 Pt电极 MERIE 刻蚀速率 表面形貌 |
| 文章编号： | 1001-2028(2008)04-0062-03 |
| 修稿时间： | 2008-01-26 |
Study on magnetically enhanced reactive ion etching of Pt electrode |
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| WU Xiao-peng,CHEN Kai-song,GU Hao-shuang,HU Kuan,XIONG Juan. Study on magnetically enhanced reactive ion etching of Pt electrode[J]. Electronic Components & Materials, 2008, 27(4): 62-64 |
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| Authors: | WU Xiao-peng CHEN Kai-song GU Hao-shuang HU Kuan XIONG Juan |
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| Affiliation: | WU Xiao-peng,CHEN Kai-song,GU Hao-shuang,HU Kuan,XIONG Juan (Faculty of Physics , Electronic Technology , Key Laboratory of Ferroelectric , Piezoelectric Materials , Devices of Hubei Province,Hubei University,Wuhan 430062,China) |
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| Abstract: | Pt electrode prepared by magnetron reactive sputtering technology was etched in SF6/O2 plasmas using magnetically enhanced reactive ion etching(MERIE) technology. Results indicate that the etching rates of Pt electrode have certain relations with the mixing ratio of etching gases and the etching power. At the same power,the etching rate reaches maximum value when the volume flow ratio of SF6 : O2 is 4 : 2. when the power is 120 W,the maximum etching rate is 12.4 nm/min. The images of AFM show that the rough... |
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| Keywords: | electron technology Pt electrode MERIE etching rate surface morphologies |
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