120-nm gate-length In0.7Ga0.3As/In0.52Al0.48As InP-based HEMT

120 nm gate-length In0.7Ga0.3As/In0.52Al0.4sAs InP-based high electron mobility transitions (HEMTs) are fabricated by a new T-shaped gate electron beam lithograph (EBL) technology,which is achieved by the use of a PMMA/PMGI/ZEP520/PMGI four-layer photoresistor stack.These devices also demonstrate excellent DC and RF characteristics: the transconductance,maximum saturation drain-to-source current,threshold voltage,maximum current gain frequency,and maximum power-gain cutoff frequency of InGaAs/InAIAs HEMTs is 520 mS/mm,446 mA/mm,-1.0 V,141 GHz and 120 GHz,respectively.The material structure and all the device fabrication technology in this work were developed by our group.