Improved light extraction in AlGaInP-based LEDs using a self-assembly metal nanomask |
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| Jiang Wenjing, Xu Chen, Shen Guangdi, Fang Rong, Gao Wei. Improved light extraction in AlGaInP-based LEDs using a self-assembly metal nanomask[J]. Journal of Semiconductors, 2010, 31(6): 064008. doi: 10.1088/1674-4926/31/6/064008 Jiang W J, Xu C, Shen G D, Fang R, Gao W. Improved light extraction in AlGaInP-based LEDs using a self-assembly metal nanomask[J]. J. Semicond., 2010, 31(6): 064008. doi: 10.1088/1674-4926/31/6/064008.Export: BibTex EndNote |
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| Authors: | Jiang Wenjing Xu Chen Shen Guangdi Fang Rong Gao Wei |
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| Affiliation: | Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100124, China;Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100124, China;Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100124, China;Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100124, China;Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100124, China |
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| Abstract: | This paper reports a new method of fabricating AIGaInP-based nanorod light emitting diodes (LEDs) by using self-assembly metal layer nanomasks and inductively coupled plasma.Light-power measurements indicate that the scattering of photons considerably enhances the probability of escaping from the nanorod LEDs.The light-intensity of the nanorod LED is increased by 34% for a thin GaP window layer,and by 17% for an 8μm GaP window layer.The light-power of the nanorod LED is increased by 25% and 13%,respectively. |
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| Keywords: | AlGaInP-LED nano-mask light power |
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