A 2.1-6 GHz SiGe BiCMOS low-noise amplifier design for a multi-mode wideband receiver |
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Authors: | Chen Lei Ruan Ying Ma Heliang Lai Zongsheng |
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Affiliation: | Institute of Microelectronics Circuit & System,East China Normal University,Shanghai 200062,China |
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Abstract: | A wideband low-noise amplifier (LNA) with ESD protection for a multi-mode receiver is presented.The LNA is fabricated in a 0.18-μm SiGe BiCMOS process,covering the 2.1 to 6 GHz frequency band.After optimized noise modeling and circuit design,the measured results show that the LNA has a 12 dB gain over the entire bandwidth,the input third intercept point (IIP3) is -8 dBm at 6 GHz,and the noise figure is from 2.3 to 3.8 dB in the operating band.The overall power consumption is 8 mW at 2.5 V voltage supply. |
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Keywords: | SiGe BiCMOS low- noise-amplifier wideband electrostatic discharge |
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