Ti/WSi/Ni ohmic contact to n-type SiCN |
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| Cheng Wenjuan, Qian Yanni, Ma Xueming. Ti/WSi/Ni ohmic contact to n-type SiCN[J]. Journal of Semiconductors, 2010, 31(4): 043003. doi: 10.1088/1674-4926/31/4/043003 Cheng W J, Qian Y N, Ma X M. Ti/WSi/Ni ohmic contact to n-type SiCN[J]. J. Semicond., 2010, 31(4): 043003. doi: 10.1088/1674-4926/31/4/043003.Export: BibTex EndNote |
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| Authors: | Cheng Wenjuan Qian Yanni Ma Xueming |
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| Affiliation: | Department of Physics, East China Normal University, Shanghai 200062, China;Department of Physics, East China Normal University, Shanghai 200062, China;Department of Physics, East China Normal University, Shanghai 200062, China |
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| Abstract: | Ti/WSi/Ni contact to n-type SiCN was investigated using the circular transmission line method. Current-voltage characteristics, X-ray diffraction and X-ray photoelectron spectroscopy were used to characterize the contacts before and after annealing. It is shown that the conducting behavior of the contacts is dependent on the annealing temperature. After annealing at 900 ℃ or above, ohmic contacts with specific contact resistivity were achieved. The 1000-℃-annealed contact exhibits the lowest specific contact of 3.07 ×10-5 Ω·cm2. The formation of ohmic contact with low specific contact resistivity was discussed. |
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| Keywords: | SiCN ohmic contact electrical property |
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