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High contrast ratio, high uniformity multiple quantum well spatial light modulators |
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| Authors: | Huang Yuyang Liu H C Wasilewski Z R Buchanan M Laframboise S R Yang Chen Cui Guoxin Bian Lifeng Yang Hui Zhang Yaohui |
| Affiliation: | 1. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China 2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China;Institute for Microstructural Sciences, National Research Council, Ottawa K1A OR6, Canada 3. Institute for Microstructural Sciences, National Research Council, Ottawa K1A OR6, Canada 4. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China |
| Abstract: | Our latest research results on GaAs-AlGaAs multiple quantum well spatial light modulators are presented.The thickness uniformity of the epitaxial layers across the 3-inch wafer grown by our molecular beam epitaxy is better than 0.1% and the variation of cavity resonance wavelength within the wafer is only 0.9 nm. A contrast ratio (CR) of 102 by varying bias voltage from 0 to 6.7 V is achieved after fine tuning the cavity by etching an adjust layer. Both theoretical and experimental results demonstrate that incorporating an adjust layer is an effective tuning method for obtaining high CR. |
| Keywords: | spatial light modulator multiple quantum well uniformity contrast ratio adjust layer matching condition |
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