Effect of bath temperature on the properties of CuInxGa1-x Se2 thin films grown by the electrodeposition technique |
| |
Authors: | Cao Jie Qu Shengchun Liu Kong Wang Zhanguo |
| |
Affiliation: | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China |
| |
Abstract: | Electrodeposition is a promising and low cost method to synthesize CulnxGa1-xSe2 (CIGS)thin films as an absorber layer for solar cells. The effect of bath temperature on the properties of CIGS thin films was investigated in this paper. CIGS films of 1 μm thickness were electrodeposited potentiostatically from aqueous solution, containing trisodium citrate as a complexing agent, on Mo/glass substrate under a voltage of-0.75 V, and bath temperatures were varied from 20 to 60 ℃. The effects of bath temperature on the properties of CIGS thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy. XRD revealed the presence of the CuIn0.7Ga0.3Se2 phase, the optimal phase for application in solar cells. The grain dimensions and crystallizability increase along with the increase of the bath temperature, and the films become stacked and homogeneous. There were few changes in surface morphology and the composition of the films. |
| |
Keywords: | CuInGaSe2 thin films solar cells electrodeposition |
本文献已被 万方数据 等数据库收录! |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|