A novel precision curvature-compensated bandgap reference |
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| Zhou Zekun, Ming Xin, Zhang Bo, Li Zhaoji. A novel precision curvature-compensated bandgap reference[J]. Journal of Semiconductors, 2010, 31(1): 015010. doi: 10.1088/1674-4926/31/1/015010 Zhou Z K, Ming X, Zhang B, Li Z J. A novel precision curvature-compensated bandgap reference[J]. J. Semicond., 2010, 31(1): 015010. doi: 10.1088/1674-4926/31/1/015010.Export: BibTex EndNote |
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| Authors: | Zhou Zekun Ming Xin Zhang Bo Li Zhaoji |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, China |
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| Abstract: | A high precision high-order curvature-compensated bandgap reference compatible with the standard CMOS process, which uses a compensation proportional to V_TlnT realized by utilizing voltage to current converters and the voltage current characteristics of a base-emitter junction, is presented. Experiment results of the proposed bandgap reference implemented with the CSMC 0.5-μm CMOS process demonstrate that a temperature coefficient of 3.9 ppm/℃ is realized at 3.6 V power supply, a power supply rejection ratio of 72 dB is achieved, and the line regulation is better than 0.304 mV/V dissipating a maximum supply current of 42μA. |
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| Keywords: | high-order curvature compensation CMOS bandgap reference temperature coefficient PSRR |
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