An X-band four-way combined GaN solid-state power amplifier |
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Authors: | Chen Chi Hao Yue Feng Hui Gu Wenping Li Zhiming Hu Shigang Ma Teng |
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Affiliation: | National Key Laboratory of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an 710071,China |
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Abstract: | An X-band four-way combined GaN solid-state power amplifier module is fabricated based on a self-developed AlGaN/GaN HEMT with 2.5-mm gate width technology on SiC substrate. The module consists of an Al-GaN/GaN HEMT, Wilkinson power hybrids, a DC-bias circuit and microstrip matching circuits. For the stability of the amplifier module, special RC networks at the input and output, a resistor between the DC power supply and a transistor gate at the input and 3λ/4 Wilkinson power hybrids are used for the cancellation of low frequency self-oscillation and crosstalk of each amplifier. Under V_(ds)= 27 V, V_(gs) = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5 dB with a power added efficiency of 17.9%, and an output power of 42.93 dBm; the power gain compression is 2 dB. For a four-way combined solid-state amplifier, the power combining efficiency is 67.5%. It is concluded that the reduction in combining efficiency results from the non-identical GaN HMET, the loss of the hybrid coupler and the circuit fabricating errors of each one-way amplifier. |
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Keywords: | AIGaN/GaN HEMT solid-state power amplifiers Wilkinson hybrid coupler |
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