Characteristics of blocking voltage for power 4H-SiC BJTs with mesa edge termination |
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| Zhang Qian, Zhang Yuming, Zhang Yimen. Characteristics of blocking voltage for power 4H-SiC BJTs with mesa edge termination[J]. Journal of Semiconductors, 2010, 31(7): 074007. doi: 10.1088/1674-4926/31/7/074007 Zhang Q, Zhang Y M, Zhang Y M. Characteristics of blocking voltage for power 4H-SiC BJTs with mesa edge termination[J]. J. Semicond., 2010, 31(7): 074007. doi: 10.1088/1674-4926/31/7/074007.Export: BibTex EndNote |
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| Authors: | Zhang Qian Zhang Yuming Zhang Yimen |
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| Affiliation: | Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | According to the avalanche ionization theory,a computer-based analysis is performed to analyze the structural parameters of single-and multiple-zone junction termination extension (JTE) structures for 4H-SiC bipolar junction transistors (BJTs) with mesa structure.The calculation results show that a single-zone JTE can yield high breakdown voltages if the activated JTE dose and the implantation width are controlled precisely and a multiple-zone JTE method can decrease the peak surface field while still maintaining a high blocking capability.The influences of the positive and negative surface or interface states on the blocking capability are also shown.These conclusions have a realistic meaning in optimizing the design of a mesa power device. |
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| Keywords: | 4H-SiC BJTs blocking voltage junction termination extension mesa device |
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