A 4 W K-band GaAs MMIC power amplifier with 22 dB gain |
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| Authors: | Huang Zhengliang Yu Faxin Zheng Yao |
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| Affiliation: | 1. Institute of Astronautic Electronic Engineering, School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, China
2. Center for Engineering and Scientific Computation, School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, China |
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| Abstract: | A 4 W K-band AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) mono-lithic microwave integrated circuit (MMIC) high power amplifier (PA) is reported. This amplifier is designed to fully match for a 50 Ω input and output impedance based on the 0.15 μm power PHEMT process. Under the condition of 5.6 V and 2.6 A DC bias, the amplifier has achieved a 22 dB small-signal gain, better than a 13 dB input return loss,and 36 dBm saturation power with 25% PAE from 19 to 22 GHz. |
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| Keywords: | K-band power amplifier MMIC PHEMT |
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