Suppression of extension of the photo-sensitive area for a planar-type front-illuminated InGaAs detector by the LBIC technique |
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| Li Yongfu, Tang Hengjing, Li Tao, Zhu Yaoming, Jiang Peilu, Qiao Hui, Li Xue, Gong Haimei. Suppression of extension of the photo-sensitive area for a planar-type front-illuminated InGaAs detector by the LBIC technique[J]. Journal of Semiconductors, 2010, 31(1): 013002. doi: 10.1088/1674-4926/31/1/013002 Li Y F, Tang H J, Li T, Zhu Y M, Jiang P L, Qiao H, Li X, Gong H M. Suppression of extension of the photo-sensitive area for a planar-type front-illuminated InGaAs detector by the LBIC technique[J]. J. Semicond., 2010, 31(1): 013002. doi: 10.1088/1674-4926/31/1/013002.Export: BibTex EndNote |
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| Authors: | Li Yongfu Tang Hengjing Li Tao Zhu Yaoming Jiang Peilu Qiao Hui Li Xue Gong Haimei |
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| Affiliation: | State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Aca;State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Aca;State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Aca;State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Aca;State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Aca;State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Aca;State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Aca;State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Aca |
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| Abstract: | To suppress the extension of the photo-sensitive area of a planar-type InGaAs detector, the structure of the detector was modified, and the small-diffusion-area diffusion method, circle-type covering contact and guard-ring were introduced. The laser-beam-induced-current (LBIC) technique was used to study the photo responsive characteristics of the photo-sensitive area of different detector structures. It was indicated that, by modifying the size of the diffusion area, the width of the circle-type covering contact, the distance between the guard-ring and the photo-sensitive area and the working status of the guard-ring, extension of the photo-sensitive area could be effectively suppressed, and the detector photo-sensitive area could be exactly defined. |
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| Keywords: | InGaAs photodiode LBIC planar type device photo-sensitive area |
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