A high-performance enhancement-mode AlGaN/GaN HEMT |
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| Authors: | Feng Zhihong Xie Shengyin Zhou Rui Yin Jiayun Zhou Wei Cai Shujun |
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| Affiliation: | 1. National Key Laboratory of Application Specific Integrated Circuit,Shijiazhuang 050051,China
2. State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China |
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| Abstract: | An enhancement-mode AlGaN/GaN HEMT with a threshold voltage of 0.35 V was fabricated by fluorine plasma treatment.The enhancement-mode device demonstrates high-performance DC characteristics with a saturation current density of 667 mA/mm at a gate bias of 4 V and a peak transconductance of 201 mS/mm at a gate bias of 0.8 V.The current-gain cut-off frequency and the maximum oscillation frequency of the enhancement-mode device with a gate length of μm are 10.3 GHz and 12.5 GHz,respectively,which is comparable with the depletion-mode device.A numerical simulation supported by SIMS results was employed to give a reasonable explanation that the fluorine ions act as an acceptor trap center in the barrier layer. |
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| Keywords: | enhancement-mode AlGaN/GaN HEMT fluorine plasma threshold voltage numerical simulation |
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