A high-performance enhancement-mode AlGaN/GaN HEMT |
| |
| Feng Zhihong, Xie Shengyin, Zhou Rui, Yin Jiayun, Zhou Wei, Cai Shujun. A high-performance enhancement-mode AlGaN/GaN HEMT[J]. Journal of Semiconductors, 2010, 31(8): 084001. doi: 10.1088/1674-4926/31/8/084001 Feng Z H, Xie S Y, Zhou R, Yin J Y, Zhou W, Cai S J. A high-performance enhancement-mode AlGaN/GaN HEMT[J]. J. Semicond., 2010, 31(8): 084001. doi: 10.1088/1674-4926/31/8/084001.Export: BibTex EndNote |
| |
| Authors: | Feng Zhihong Xie Shengyin Zhou Rui Yin Jiayun Zhou Wei Cai Shujun |
| |
| Affiliation: | National Key Laboratory of Application Specific Integrated Circuit, Shijiazhuang 050051, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;National Key Laboratory of Application Specific Integrated Circuit, Shijiazhuang 050051, China;National Key Laboratory of Application Specific Integrated Circuit, Shijiazhuang 050051, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;National Key Laboratory of Application Specific Integrated Circuit, Shijiazhuang 050051, China |
| |
| Abstract: | An enhancement-mode AlGaN/GaN HEMT with a threshold voltage of 0.35 V was fabricated by fluorine plasma treatment.The enhancement-mode device demonstrates high-performance DC characteristics with a saturation current density of 667 mA/mm at a gate bias of 4 V and a peak transconductance of 201 mS/mm at a gate bias of 0.8 V.The current-gain cut-off frequency and the maximum oscillation frequency of the enhancement-mode device with a gate length of μm are 10.3 GHz and 12.5 GHz,respectively,which is comparable with the depletion-mode device.A numerical simulation supported by SIMS results was employed to give a reasonable explanation that the fluorine ions act as an acceptor trap center in the barrier layer. |
| |
| Keywords: | enhancement-mode AlGaN/GaN HEMT fluorine plasma threshold voltage numerical simulation |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
