| Abstract: | A new trench gate IGBT structure with a floating P region is proposed,which introduces a floating P region into the trench accumulation layer controlled IGBT(TAC-IGBT).The new structure maintains a low on-state voltage drop and large forward biased safe operating area(FBSOA)of the TAC-IGBT structure while reduces the leakage current and improves the breakdown voltage.In addition,it enlarges the short circuit safe operating area(SCSOA)of the TAC-IGBT,and is simple in fabrication and design.Simulation results indicate that,for IGBT structures with a breakdown voltage of 1200 V, the leakage current of the new trench gate IGBT structure is one order of magnitude lower than the TAC-IGBT structure and the breakdown voltage is 150 V higher than the TAC-IGBT. |
