A snap-shot mode cryogenic readout circuit for QWIP IR FPAs |
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| Ma Wenlong, Shi Yin, Zhang Yaohui, Liu Hongbing, Xie Baojian. A snap-shot mode cryogenic readout circuit for QWIP IR FPAs[J]. Journal of Semiconductors, 2010, 31(2): 025012. doi: 10.1088/1674-4926/31/2/025012 Ma W L, Shi Y, Zhang Y H, Liu H B, Xie B J. A snap-shot mode cryogenic readout circuit for QWIP IR FPAs[J]. J. Semicond., 2010, 31(2): 025012. doi: 10.1088/1674-4926/31/2/025012.Export: BibTex EndNote |
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| Authors: | Ma Wenlong Shi Yin Zhang Yaohui Liu Hongbing Xie Baojian |
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| Affiliation: | Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China |
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| Abstract: | The design and measurement of a snap-shot mode cryogenic readout circuit (ROIC) for GaAs/AlGaAs QWIP FPAs was reported. CTIA input circuits with pixel level built-in electronic injection transistors were proposed to test the chip before assembly with a detector array. Design optimization techniques for cryogenic and low power are analyzed. An experimental ROIC chip of a 128 × 128 array was fabricated in 0.35μm CMOS technology. Measure-ments showed that the ROIC could operate at 77 K with low power dissipation of 35 mW. The chip has a pixel charge capacity of 2.57 × 10~6 electrons and transimpedance of 1.4 × 10~7 Ω. Measurements showed that the transimpedance non-uniformity was less than 5% with a 10 MHz readout speed and a 3.3 V supply voltage. |
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| Keywords: | QWIP ROIC CTIA cryogenic transimpedance non-uniformity |
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