A CMOS variable gain low-noise amplifier with ESD protection for 5 GHz applications |
| |
| Zhang Hao, Li Zhiqun, Wang Zhigong, Zhang Li, Li Wei. A CMOS variable gain low-noise amplifier with ESD protection for 5 GHz applications[J]. Journal of Semiconductors, 2010, 31(5): 055005. doi: 10.1088/1674-4926/31/5/055005 Zhang H, Li Z Q, Wang Z G, Zhang L, Li W. A CMOS variable gain low-noise amplifier with ESD protection for 5 GHz applications[J]. J. Semicond., 2010, 31(5): 055005. doi: 10.1088/1674-4926/31/5/055005.Export: BibTex EndNote |
| |
| Authors: | Zhang Hao Li Zhiqun Wang Zhigong Zhang Li Li Wei |
| |
| Affiliation: | Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China |
| |
| Abstract: | This paper presents a variable gain low-noise amplifier (VG-LNA) for 5 GHz applications.The effect of the input parasitic capacitance on the inductively degenerated common source LNA's input impedance is analyzed in detail.A new ESD and LNA co-design method was proposed to achieve good performance.In addition,by using a simple feedback loop at the second stage of the LNA,continuous gain control is realized.The measurement results of the proposed VG-LNA exhibit 25 dB (-3.3 dB to 21.7 dB) variable gain range,2.8 dB noise figure at the maximum gain and 1 dBm IIP3 at the minimum gain,while the DC power consumption is 9.9 mW under a 1.8 V supply voltage. |
| |
| Keywords: | continuous variable gain low-noise amplifier electrostatic discharge co-design CMOS |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
