Formation of a low-resistivity penetrating metal-Si layer under the action of CO2 laser radiation |
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Authors: | P S Shkumbatyuk |
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Affiliation: | (1) Drogobych Pedagogical Institute, Drogobych |
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Abstract: | Some characteristic features observed as a result of the action of CO2 laser radiation on a metal-silicon layer are described, especially the formation of a low-resistivity penetrating layer.
The assumption is put forward that this low-resistivity penetrating layer forms as a result of the solid-phase dissolution
of metal in Si or by diffusion of the metal into defects formed by laser radiation.
Pis’ma Zh. Tekh. Fiz. 24, 60–63 (February 12, 1998) |
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