| Si基外延Ge薄膜及退火对其特性的影响研究 |
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| 引用本文： | 郑元宇.Si基外延Ge薄膜及退火对其特性的影响研究[J].光电子．激光,2011(2):215-218. |
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| 作者姓名： | 郑元宇 |
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| 作者单位： | 厦门大学物理系半导体光子学研究中心; |
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| 基金项目： | 国家“973”计划资助项目(2007CB613404); 教育部新世纪优秀人才计划资助项目(NCET-07-0724) |
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| 摘 要： | 采用超高真空化学气相沉积(UHV-CVD)系统,用低温Ge缓冲层技术在Si衬底上外延了张应变Ge薄膜.扫描电镜(TEM)图表明Si基外延Ge薄膜拥有低的位错密度,原子力显微镜(AFM)测试Ge层表面粗糙度仅为1.2 nm.对Si基外延Ge薄膜进行了不同温度下的退火,并用双晶X射线衍射(DCXRD)曲线和Raman谱进行...
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| 关 键 词： | Si基Ge薄膜 退火 张应变 互扩散 |
Ge thin films on Si substrate and thermal annealing effect on their properties |
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| ZHENG Yuan-yu.Ge thin films on Si substrate and thermal annealing effect on their properties[J].Journal of Optoelectronics·laser,2011(2):215-218. |
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| Authors: | ZHENG Yuan-yu |
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| Affiliation: | ZHENG Yuan-yu,LI Cheng,CHEN Yang-hua,LAI Hong-kai,CHEN Song-yan(Semiconductor Photonics Research Center,Department of Physics,Xiamen University,Xiamen 361005,China) |
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| Abstract: | The thermal stability of strained Ge films on Si substrate is critical for applications in electronic and optoelectronic devices.In this paper,the Ge thin films under tensile strain were grown on Si substrate with low temperature Ge buffer layer by ultra-high vacuum chemical vapor deposition.The TEM image indicates that there are low threading dislocations in the top high temperature Ge layers.The root-mean-square surface roughness of the Ge epilayer is about 1.2 nm which was evaluated by atomic force micro... |
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| Keywords: | Ge thin films on Si substrate thermal annealing tensile strain intermixing |
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