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CMOS电路瞬时辐照效应的计算机模拟分析
引用本文:黄胜明,宋钦歧,张正德,黄敞. CMOS电路瞬时辐照效应的计算机模拟分析[J]. 微电子学, 1988, 0(6)
作者姓名:黄胜明  宋钦歧  张正德  黄敞
作者单位:骊山微电子公司(黄胜明,宋钦歧,张正德),骊山微电子公司(黄敞)
摘    要:利用LSTRAC-2对CD4007电路进行瞬时辐照效应模拟,分析了模拟中用到的有关参数的提取方法,对模拟的电路样品进行了瞬态辐照实验,并就结果进行了比较和讨论。结果表明,模拟和实验符合得较好。

关 键 词:瞬时辐照  CMOS电路  计算机模拟

Computer Simulation of Transient Radiation Effects on CMOS Circuits
Huang Shengming,Song Qinqi,Zhang Zhengde and Huang Chang. Computer Simulation of Transient Radiation Effects on CMOS Circuits[J]. Microelectronics, 1988, 0(6)
Authors:Huang Shengming  Song Qinqi  Zhang Zhengde  Huang Chang
Affiliation:Lishan Microelectronics Corp.
Abstract:The transient radiation effect of CD4007 circuit is simulated using the computer program LSTRAC-2, and techniques to extract parameters used in the simulation were analysed. An experiment of transient radiation was conductod on the simulated sample and the results were compared and discussed. It has been shown that the results of simulation and experiment were in good agreement.
Keywords:Transient radiation   CMOS circuit   Computer simulation  
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