Separation of interface and nonuniform oxide traps by the DCcurrent-voltage method |
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Authors: | Kavalieros JT Chih-Tang Sah |
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Affiliation: | Dept. of Electr. Eng., Florida Univ., Gainesville, FL; |
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Abstract: | Areally nonuniform distribution of oxide charge gives a significant distortion in the gate capacitance and subthreshold DC drain current versus DC gate voltage characteristics. This distortion prevents a reliable determination of the spatial profile of interface and oxide traps generated when a MOS transistor is subjected to channel hot carrier stress. A new procedure is demonstrated which separates the nonuniform oxide charge distribution from interface traps by combining the analysis of two experimental DC characteristics: the subthreshold drain-current and the DC base recombination current versus the gate voltage |
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