3D Free‐Form Patterning of Silicon by Ion Implantation,Silicon Deposition,and Selective Silicon Etching |
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| Authors: | Andreas C. Fischer Lyubov M. Belova Yuri G. M. Rikers B. Gunnar Malm Henry H. Radamson Mohammadreza Kolahdouz Kristinn B. Gylfason Göran Stemme Frank Niklaus |
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| Affiliation: | 1. KTH Royal Institute of Technology, Microsystem Technology Laboratory, 10044 Stockholm, Sweden;2. KTH Royal Institute of Technology, Engineering Materials Physics Laboratory, 10044 Stockholm, Sweden;3. FEI Electron Optics, Achtseweg Noord 5, 5600 KA Eindhoven, The Netherlands;4. KTH Royal Institute of Technology, Integrated Devices and Circuits, 16440 Kista, Sweden |
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| Abstract: | A method for additive layer‐by‐layer fabrication of arbitrarily shaped 3D silicon micro‐ and nanostructures is reported. The fabrication is based on alternating steps of chemical vapor deposition of silicon and local implantation of gallium ions by focused ion beam (FIB) writing. In a final step, the defined 3D structures are formed by etching the silicon in potassium hydroxide (KOH), in which the local ion implantation provides the etching selectivity. The method is demonstrated by fabricating 3D structures made of two and three silicon layers, including suspended beams that are 40 nm thick, 500 nm wide, and 4 μm long, and patterned lines that are 33 nm wide. |
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| Keywords: | microelectromechanical systems nanostructures additive layer‐by‐layer fabrication 3D silicon patterning focused ion beam (FIB) implantation |
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