Organic Thin‐Film Transistors with Anodized Gate Dielectric Patterned by Self‐Aligned Embossing on Flexible Substrates

An upscalable, self‐aligned patterning technique for manufacturing high‐ performance, flexible organic thin‐film transistors is presented. The structures are self‐aligned using a single‐step, multi‐level hot embossing process. In combination with defect‐free anodized aluminum oxide as a gate dielectric, transistors on foil with channel lengths down to 5 μm are realized with high reproducibility. Resulting on‐off ratios of 4 × 10⁶ and mobilities as high as 0.5 cm² V^?1 s^?1 are achieved, indicating a stable process with potential to large‐area production with even much smaller structures.