| P2O5-Bi2O3掺杂对NiCuZn/PZT电磁性能的影响 |
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| 引用本文： | 李涛,贾利军,张怀武,殷水明,陈世钗. P2O5-Bi2O3掺杂对NiCuZn/PZT电磁性能的影响[J]. 电子元件与材料, 2009, 28(8). DOI: 10.3969/j.issn.1001-2028.2009.08.008 |
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| 作者姓名： | 李涛 贾利军 张怀武 殷水明 陈世钗 |
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| 作者单位： | 电子科技大学,电子薄膜与集成器件国家重点实验室,四川,成都,610054;电子科技大学,电子薄膜与集成器件国家重点实验室,四川,成都,610054;电子科技大学,电子薄膜与集成器件国家重点实验室,四川,成都,610054;电子科技大学,电子薄膜与集成器件国家重点实验室,四川,成都,610054;电子科技大学,电子薄膜与集成器件国家重点实验室,四川,成都,610054 |
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| 基金项目： | 国家自然科学基金资助项目(No.50872017);;国家自然科学杰出青年基金资助项目(No.60425102);;科技部国际合作项目(No.2006DFA53410) |
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| 摘 要： | 首先用sol-gel法制得Pb0.95Sr0.05(Zr0.52Ti0.48)O3(PZT)纳米粉料,然后用固相法制备NiCuZn/PZT铁氧体/陶瓷复合材料,研究了P2O5-Bi2O3复合掺杂对复合材料微观结构及电磁性能的影响。结果表明:当w(Bi2O3)=2.5%时,引入适量的P2O5,不仅可使品质因数Q值提高到55,同时起始磁导率和烧结体密度分别提高到19和6.01g/cm3,介质损耗下降到0.025。其电磁性能满足电容器和电感器件的制作要求,有望成为用于叠片式滤波器的电感、电容复合双性材料。
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| 关 键 词： | NiCuZn/PZT复合材料 复合掺杂 电磁性能 显微结构 |
Effects of P2O5-Bi2O3 co-doping on the electromagnetic properties of NiCuZn/PZT composite materials |
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| LI Tao,JIA Lijun,ZHANG Huaiwu,YIN Shuiming,CHEN Shichai. Effects of P2O5-Bi2O3 co-doping on the electromagnetic properties of NiCuZn/PZT composite materials[J]. Electronic Components & Materials, 2009, 28(8). DOI: 10.3969/j.issn.1001-2028.2009.08.008 |
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| Authors: | LI Tao JIA Lijun ZHANG Huaiwu YIN Shuiming CHEN Shichai |
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| Affiliation: | State Key Laboratory Electronic Thin Film and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China |
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| Abstract: | Firstly, Pb0.95Sr0.05(Zr0.52Ti0.48)O3 (abbreviated as PZT)nanopowder was prepared by a sol-gel method. Then NiCuZn/PZT ferrite/ceramic composite materials were fabricated using solid state reaction method. Effects of P2O5-Bi2O3 co-doping on the microstructure and electromagnetic properties of NiCuZn/PZT composite materials were investigated. When doped mass fraction of Bi2O3 is 2.5%, the proper additions of P2O5 not only make the quality factor increase to 55, but also the initial permeability and bulk dens... |
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| Keywords: | NiCuZn/PZT composite material co-doping electromagnetic properties microstructure |
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